发明名称 |
HYBRID DIELECTRIC STRUCTURE FOR IMPROVING THE STIFFNESS OF BACK END OF THE LINE STRUCTURES |
摘要 |
A multi-level, coplanar copper damascene interconnect structure on an integrated circuit chip includes a first planar interconnect layer on an integrated circuit substrate and having plural line conductors separated by a dielectric material having a relatively low dielectric constant and a relatively low elastic modulus. A second planar interconnect layer on the first planar interconnect layer comprises a dielectric film having an elastic modulus higher than in the first planar interconnect layer and conductive vias therethrough. The vias are selectively in contact with the line conductors. A third planar interconnect layer on the second planar interconnect layer has plural line conductors separated by the dielectric material and selectively in contact with the vias. |
申请公布号 |
SG101957(A1) |
申请公布日期 |
2004.02.27 |
申请号 |
SG20010000731 |
申请日期 |
2001.02.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHARLES R DAVIS;DANIEL CHARLES EDELSTEIN;JOHN C HAY;JEFFREY C HENDRICK;CHRISTOPHER JAHNES;VINCENT J. MCGAHAY |
分类号 |
H01L21/768;H01L21/3205;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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