TRENCH GATE TYPE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a trench gate type semiconductor device in which the dielectric breakdown of an insulating film 12 hardly occurs. SOLUTION: The trench gate type semiconductor device has a semiconductor region 1 and a trench gate electrode 14 arranged in a trench 10 formed in the semiconductor region 1 via the insulating film 12. Impurity concentrations in distal portions (front and back distal portions) 14a of the trench gate electrode 14 covering a wide range of the insulating film 12a adjacent to corners 10a of the trench 10 in a gate intermediately connecting portion 18 and in a partial gate pad 20 are lower than that of an intermediate portion 14c of the trench gate electrode14 or the like. COPYRIGHT: (C)2004,JPO