发明名称 |
Semiconductor device and method of forming the same |
摘要 |
The present invention provides a cylindrically shaped stack electrode having a lamination structure which comprises a cylindrically shaped outer layer and a cylindrically shaped inner layer laminated on an inner wall of said cylindrically shaped outer layer, wherein hemispherical grains are formed on an inner wall of said cylindrically shaped inner layer. The cylindrically shaped stack electrode has the lamination structure of a plurality of layers.
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申请公布号 |
US2004005757(A1) |
申请公布日期 |
2004.01.08 |
申请号 |
US20030383564 |
申请日期 |
2003.03.10 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KITAMURA HIROYUKI |
分类号 |
H01L21/8242;H01L21/02;H01L21/316;H01L27/04;H01L27/108;(IPC1-7):H01L21/20;H01L21/824 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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