Butting contact structure and method incorporating with a silicide inserted between a contact region and a conductor for a small contact window

摘要

A butting contact structure using a silicide to connect a contact region and a conductor and a method to manufacture the same are disclosed. The method comprises the steps of: forming a first area having a first conduction type and a second area having a second conduction type which is adjacent to the first area; forming a silicide to be in contact with the first and second areas; and depositing an insulating layer covering the first portion of the silicide; etching a contact window in the insulating layer for exposing a surface of the silicide; and forming a conductor filling in the contact window. The difficulty from the reduction of the contact window is overcome without altering the manufacturing process and the layer of masks. Moreover, the density and performance of the semiconductor element is improved.