| 摘要 |
PROBLEM TO BE SOLVED: To form a low resistance alloy ohmic electrode to a semiconductor layer containing an undoped In. SOLUTION: The method for forming the ohmic electrode comprises the steps of forming the ohmic electrode 7 in which a stable layer 8 and an Au layer 9 containing a predetermined element and suppressing the diffusion of an Au are sequentially laminated, on the ohmic contact semiconductor layer 6 doped with a dopant made of the predetermined element. COPYRIGHT: (C)2003,JPO
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