| 摘要 |
PURPOSE: A method for forming an interlayer dielectric having low dielectric constant is provided to be capable of preventing the generation of polymer and controlling the size of a pore by using an interlayer dielectric having uniformly distributed organic material. CONSTITUTION: A lower metal wiring(33) is formed at the upper portion of a semiconductor substrate having predetermined lower structures. An interlayer dielectric(35) is formed on the resultant structure by spin-coating silica sol compound containing organic material(36) using an organic templating process. After forming a via contact hole(37) by etching the interlayer dielectric(35) for exposing the lower metal wiring(33), an upper metal wiring is connected through the via contact hole(37) to the lower metal wiring(33). A plurality of pores are formed by removing the organic matter(36) of the interlayer dielectric(35) using a heat treatment. At this time, the size of the pore is determined by that of the organic material(36).
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