| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of fabricating semiconductor device which can control removal by etching of a film embedded to fill an element isolation groove. SOLUTION: An organic SOG film 13 is deposited on the surface of a silicon substrate 11 having an element isolation trench 12, and an impurity is then implanted thereto to form a denatured SOG film 13a. This denatured SOG film 13a is then polished chemically and mechanically to flatten this film to the height of element forming surface of the substrate 11. Subsequently, the impurity is implanted to this element forming surface to form a diffused layer 15 and moreover the surface 16 of this diffused layer 15 is formed as a metal silicide. After an inter-layer insulation film 17 is deposited on the surface thereof, a contact hole 18 is formed depending on the pattern. In this process, even when the pattern of contact hole 18 is diffused into the trench 12, the denatured SOG film 13a is not etched because the etching grade is rather low and therefore the side wall of trench 12 is never exposed.
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