| 发明名称 |
Heat transfer structure and a semi-conductor device |
| 摘要 |
The present invention is a semiconductor apparatus having at least a part of a semiconductor device conjugated to a metal material for heat sink via an electric insulating material, wherein said electric insulating material is a bismuth glass layer.
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| 申请公布号 |
US2003025196(A1) |
申请公布日期 |
2003.02.06 |
| 申请号 |
US20020209255 |
申请日期 |
2002.07.30 |
| 申请人 |
HITACHI, LTD. |
发明人 |
NAKAMURA TAKAYOSHI;SAITO RYUICHI;TAMBA AKIHIRO;NAITOU TAKASHI;YAMAMOTO HIROKI;NAMEKAWA TAKASHI |
| 分类号 |
H01L23/373;H01L25/07;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/373 |
| 代理机构 |
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