| 摘要 |
PROBLEM TO BE SOLVED: To provide a multi-beam semiconductor laser device which outputs beams uniform in optical output and is suitably constituted so as to output large high optical power. SOLUTION: This multi-beam semiconductor laser device is a GaN semiconductor laser device having an SCH structure, where laser stripes 44 are provided on a common sapphire board 42, and laser beams are projected from the stripe projection end faces 44a of the laser stripes provided to a cleavage plane vertical to the laser stripes 44. The laser stripes 44 are each of an air ridge type which is current-constricted by an SiO2 film, a P-side electrode 46 is provided on each ridge, and the laser stripes 44 are formed on a common mesa 45 provided on the sapphire board 42. An N-side electrode 48 is exposed behind the common mesa 45 as a common counter electrode to the P-side electrodes 46, and provided on a contact layer 50 which extends from the rear end face of the laser stripes 44 in the direction of the laser stripes.
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