| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the manufacturing costs can be ever more reduced by simplifying the patterning process of an insulating resin layer for efficiently absorbing and relieving the deforming stress especially affecting metal bumps. SOLUTION: An electrode pad 12 and a passivation film 13 for exposing the electrode pad 12 are formed on a semiconductor substrate 11. An insulating stress relieving resin layer 14a of an elastic photosensitive material is also formed on the semiconductor substrate 11, and an Au wire 22a is formed on the resin layer 14a. A specified area of the resin layer 14a is exposed while being covered with an exposure mask, and is subjected to etching for forming an opening 16 in which the electrode pad 12 is exposed. The Au wire 22a and the electrode pad 12 exposed in the opening 16 are connected and metal bumps 25 are formed on the Au wire 22a.
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