| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a stress of a substrate and a short channel effect and to improve a margin between gates by preliminarily implanting ions which are not used as dopants. CONSTITUTION: After growing a gate oxide(22) on a semiconductor substrate(21), a gate electrode(26) and a cap insulator(25) are sequentially formed on the gate oxide(22). An insulating spacer(27) is formed at both sidewalls of the gate electrode and the cap insulator. Ions are not used as dopants, such as F, Ar, Ge or Si are implanted into the substrate by using the gate electrode and the insulating spacer as a mask. Then, source and drain regions are formed in the substrate by implanting dopants, such as boron(B). Thereby, diffusion of boron ions is remarkably reduced.
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