| 摘要 |
<p>A method of manufacturing polysilicon film comprises the steps of forming amorphous silicon film (33) on a glass substrate (31), the silicon film including a first area (33a) and a second area (33b) in contact with the first area (33b); irradiating the first area (33a) of the amorphous silicon film (33) with laser (35) having a wavelength of 390 nm to 640 nm to form a first polycrystalline area (34a); and irradiating the second area (33b) of the amorphous silicon film (33) and part of the first polycrystalline area (34a) in contact with the second area (33b) with laser (35) having a wavelength of 390 nm to 640 nm to form a second polycrystalline area (34b) in contact with the first polycrystalline area (34a).</p> |
