| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting semiconductor element in which a specified peak wavelength can be obtained stably even when a distance between the upper surface of a DBR and the lower surface of a quantum well active layer varies slightly. SOLUTION: The thickness of a first clad layer 4 between a DBR 3 and a quantum well active layer 5 is set to 0.3 μm. The thickness becomes 0.4 μm or less because of 2λ/n (μm) or less when λ is 0.65 μm and n is 3.5 assuming that the luminous wavelength of the light emitting semiconductor element is λand a refractive index of the first clad layer 4 is n. In addition, the first clad layer 4 is formed in a manner that a phase difference between the light emitted from the quantum well active layer 5 and that reflected on the DBR 3 becomes an integer multiple of 2π. The luminous spectrum of the semiconductor element is produced while two bottoms due to interference between the emitted light and reflection light appear on both sides of the main peak with a wavelength of about 50 to 60 nm in between, so that the bottoms are hard to be aligned with the main peak. As a result, the peak wavelength of the semiconductor element is maintained. |
