| 摘要 |
<p>A method for producing a semiconductor component with adjacent Schottky ( 5 ) and pn ( 9 ) junctions positions in a drift area ( 2, 10 ) of a semiconductor material. According to the method, a silicon carbide substrate doped with a first doping material of at least 10<SUP>18 </SUP>cm<SUP>-3 </SUP>is provided, and a silicon carbide layer with a second doping material of the same charge carrier type in the range of 10<SUP>14 </SUP>and 10<SUP>17 </SUP>cm<SUP>-3 </SUP>is homo-epitaxially deposited on the substrate. A third doping material with a complimentary charge carrier is inserted, and structured with the aid of a diffusion and/or ion implantation, on the silicon carbide layer surface that is arranged far from the substrate to form pn junctions. Subsequently the component is subjected to a first temperature treatment between 1400° C. and 1700° C. Following this temperature treatment, a first metal coating is deposited on the implanted surface in order to form a Schottky contact and then a second metal coating is deposited in order to form an ohmic contact. Subsequently the first and second metal coatings are structured as designed.</p> |
