| 摘要 |
PURPOSE: To provide a semiconductor memory in which various static breakdown strength capability can be tested with a WLBI test. CONSTITUTION: A semiconductor memory comprises bit lines transmitting data of a memory cell, plural first sense amplifier circuits connected to the odd numbered bit lines, plural second sense amplifier circuits connected to the even numbered bit lines, and a clamp voltage generating circuit supplying first clamp voltage to the plural first sense amplifier circuits during test operation and supplying second clamp voltage to the plural second sense amplifier circuits, the odd numbered bit lines are clamped to the first clamp voltage and the even numbered bit lines are clamped to the second clamp voltage.
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