发明名称 |
Semiconductor memory device |
摘要 |
Sense amplifiers are respectively located at both ends of a bit line pair. These sense amplifiers amplify a voltage difference between the bit line pair in response to a sense amplifier active signal during a sensing period. Since the voltage difference between the bit line pair is amplified at the both ends of the bit line pair, the time spent amplifying the voltage between the bit line pair may be shortened.
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申请公布号 |
US6282142(B1) |
申请公布日期 |
2001.08.28 |
申请号 |
US20000635238 |
申请日期 |
2000.08.09 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
MIYAWAKI MASAFUMI |
分类号 |
G11C11/401;G11C7/18;G11C11/4097;(IPC1-7):G11C8/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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