| 摘要 |
<p>PROBLEM TO BE SOLVED: To increase a production efficiency of a crystalline silicon-based semiconductor thin film by a low temperature plasma CVD method and the improve characteristics thereof, by increasing a film forming rate of the thin film. SOLUTION: In the method for manufacturing a crystalline silicon-based semiconductor thin film, conditions of depositiong the thin film on a substrate by plasma CVD method are set so that a distance between plasma discharge electrodes is within a 1.5 cm, a pressure in a reaction chamber is 667 Pa or more, a flow rate of a hydrogen gas to a saline-based gas in the reaction gas is 100 or more, and a plasma discharge power density is 100 mW/cm2 or more. And as the reaction gas introduced from gas blow-out electrodes advances between the electrodes and downstream thereof, a ratio of the silage-based gas to the hydrogen gas in the reaction gas blown from the electrodes per unit area thereof is increased.</p> |
