| 摘要 |
Transistor has a drain extension region (24) formed by ion implantation with a first partial area (44) arranged under the field oxide arm (37) and a second contiguous partial area (38) extending towards the drain (28). The doping concentration is greater in the first area than the second area (38), which is greater than the doping concentration in the remaining area of the drain extension. A channel area (20) around the first and second partial areas is formed by ion implantation and then thermally induced diffusion to form a linking area with the second partial area (38) of the drain extension, with the doping in this area, which has opposite charge carrier sign, being less than that in the remaining channel area. |
