METHOD FOR FORMING INSULATION LAYER WITH LOW DIELECTREIC CONSTANT

摘要

PURPOSE: A forming method is to form the first insulating layer with low dielectreic constant on a semiconductor substrate and to form a buffer insulating layer on the first insulation layer, so as to increase crack resistance and to improve planarization of the insulation layer. CONSTITUTION: A forming method of an insulating layer with low dielectreic constant comprises the steps of: forming the first insulation layer(106) with low dielectreic constant on a semiconductor substrate having patterns of more than 6000 angstrom step; forming a buffer insulation layer(108) on the upper portion of the first insulating layer with a low dielectreic constant by a CVD process; and forming the second insulating layer with a low dielectreic constant on the upper portion of the buffer insulation layer, the first insulating layer including an FOX, HOSP or nano-glass layers formed by a spin-coating, and the buffer insulating layer being deposited in temperature below 450 deg.C.