发明名称 METHOD FOR FABRICATING TUNNELING MAGNETO-RESISTANCE EFFECT HEAD
摘要 PROBLEM TO BE SOLVED: To improve head characteristics by forming side insulating layers on both sides of a layered structure including a ferromagnetic pinned layer, a tunneling barrier layer and a non-magnetic metal protect layer, cleaning a surface of the non-magnetic metal protect layer, and forming a ferromagnetic free layer facing the ferromagnetic pinned layer via the cleaned surface. SOLUTION: A pinned layer 50, a ferromagnetic pinned layer 40, a tunneling barrier layer 30, and a non-magnetic metal protect layer 7 are sequentially formed in a layered structure, and side insulating layers 93, 93 are formed on both sides of the layered structure, respectively. A surface of the non- magnetic metal protect layer 7 is cleaned, and a ferromagnetic free layer 20 is so formed as to face the ferromagnetic pinned layer 40 via the cleaned surface. Bias applying means 61, 61 are respectively formed at a constant space D from opposite ends of the ferromagnetic free layer 20 in the longitudinal direction thereof. The constant space D is preferably in the range from 0.02μm to 0.15μm.
申请公布号 JP2001034919(A) 申请公布日期 2001.02.09
申请号 JP19990208440 申请日期 1999.07.23
申请人 TDK CORP 发明人 SHIMAZAWA KOJI;ARAKI SATORU;MORITA HARUYUKI
分类号 G11B5/39;G01R33/09;H01F10/08;H01F10/32;H01F41/32;H01L43/08;H01L43/12;(IPC1-7):G11B5/39 主分类号 G11B5/39
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