METHOD FOR FORMING CONTACT HOLE IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A contact hole formation method in semiconductor devices is provided to be capable of increasing the contact area connected to the bottom layer, by making bigger the lower portion of the contact hole than an upper portion of the contact hole. CONSTITUTION: A contact hole formation method includes etching an interlayer insulating film(2) to form a contact hole(10). During the process of cleaning a contact using solutions, an insulating film having a higher corrosion rate is used as the first interlayer insulating film on the most bottom portion of the contact hole, so that it can be relatively greatly corroded compared to an insulating film on the first interlayer insulating film. Thus, the contact area can be increased without increasing the total size of the contact hole.