| 摘要 |
PROBLEM TO BE SOLVED: To improve throughput by changing an exposure method at the time of plotting a device pattern and at the time of exposing the periphery of a molded chip area, so called, at the time of peripheral exposure by using a variable molding type EB(electron beam) direct plotting device. SOLUTION: In this electronic beam exposure method for exposing a semiconductor wafer with an electron beam, a semiconductor wafer 4 is divided into a molded chip and a peripheral exposure chip, and each chip is divided into a main deflection area 1, sub-deflection area 2, and sub sub-deflection region 3, and the shot size of the sub sub-deflection region of the peripheral exposure chip is made larger than the size of the maximum shot size of the sub sub- deflection region of the molded chip.
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