发明名称 SENSE AMPLIFIER CIRCUIT AND MEMORY AND SEMICONDUCTOR DEVICE USING THE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To shorten the data access time. SOLUTION: In a PMOS sense amplifier 15P, a transfer gate 10A is connected between the gate of a PMOS transistor 151 and the drain of a PMOS transistor 152, and a transfer gate 11A is connected between the gate of the PMOS transistor 152 and the drain of the PMOS transistor 151, and this sense amplifier becomes to be the amplifier of a direct sensing system by keeping the transfer gates 10A, 11A turned off while fixing sources of the PMOS transistors 151, 152 to a potential Vii, and this amplifier functions as an original PMOS sense amplifier by succeedingly turning the gates 10A, 11A on. Moreover, an NMOS sense amplifier 15N is also constituted similarly with the PMOS sense amplifier and in the case of reading out data from a memory array MC1 the gates 10A, 11A are kept turned on by fixing sources of NMOS transistors 153, 154 to a potential Vss.
申请公布号 JP2000040371(A) 申请公布日期 2000.02.08
申请号 JP19990219491 申请日期 1999.08.03
申请人 FUJITSU LTD 发明人 WAKAYAMA SHIGETOSHI;GOTO KOTARO;SAITO YOSHIHISA;OGAWA JUNJI
分类号 G11C11/409;(IPC1-7):G11C11/409 主分类号 G11C11/409
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