| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor strain sensor, capable of detecting the deflection amount of a probe with high sensitivity by forming a p-n junction or a bipolar transistor, which is a semiconductor junction, in a deflecting part of the probe composed of a semiconductor substrate. SOLUTION: A probe 10 is composed of a cantilever arm part 10a and a support part 10b, and a tip end 10c of the cantilever arm part 10a is provided with a probe. A semiconductor junction 9 is formed in the vicinity of the surface of the root part of the arm part 10a. As a semiconductor junction, a p-n junction or a bipolar transistor is provided. A thin film 8 (an insulation film 40) regularly adding stresses to the semiconductor junction 9 of the cantilever is provided for enhancing the detection sensitivity. |
