摘要 |
PROBLEM TO BE SOLVED: To provide a substrate, composed of a nitride semiconductor having good crystallinity. SOLUTION: A first wafer in which a nitride semiconductor 3 is grown on a first substrate 1, and a second wafer in which a nitride semiconductor 3' is grown on a second substrate 1' are prepared. Then, after the first and second wafers are stuck to each other by bringing the nitride semiconductors of the wafers into contact with each other, the first and second substrates 1 and 1' are removed. |