发明名称 MANUFACTURE OF NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a substrate, composed of a nitride semiconductor having good crystallinity. SOLUTION: A first wafer in which a nitride semiconductor 3 is grown on a first substrate 1, and a second wafer in which a nitride semiconductor 3' is grown on a second substrate 1' are prepared. Then, after the first and second wafers are stuck to each other by bringing the nitride semiconductors of the wafers into contact with each other, the first and second substrates 1 and 1' are removed.
申请公布号 JPH10229218(A) 申请公布日期 1998.08.25
申请号 JP19970031734 申请日期 1997.02.17
申请人 NICHIA CHEM IND LTD 发明人 SENOO MASAYUKI;NAKAMURA SHUJI
分类号 H01L21/02;H01L21/205;H01L33/32 主分类号 H01L21/02
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