| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a non-volatile semiconductor memory in which design and process is easy, trouble for writing after manufacturing is not required, cell data can be normally read out under all conditions, and anxiety for secular change is not required. SOLUTION: In a non-volatile memory which is provided with a floating gate and a control gate and has plural memory cell transistors 52 in which the prescribed data is stored depending on the existence of electric charges accumulated in the floating gate, a dummy cell 61 is formed by providing a terminal applying a bias voltage to the floating gate of at least either of plural memory cell transistors, the prescribed voltage is applied to the terminal, the prescribed data is read out by comparing a current from the memory cell transistors 52 with a current from the dummy cell 61.</p> |
