| 摘要 |
A semiconductor wafer subject to a metallization etching process includes post-etching residue that is removed using a fluorine containing solution having a substantial amount of CO2 dissolved therein. Alternatively, or in addition, a fluorine containing solution, or the like, that has been used to remove the residue is rinsed from the wafer using a solvent containing a substantial amount of O3 dissolved therein. In each instance, pitting of the metallization layer is reduced. |
