| 摘要 |
PROBLEM TO BE SOLVED: To simplify a device by making a spot large at a read-out time, making the spot small at a write-in time or changing a spot size corresponding to plural standard sizes. SOLUTION: As a photoresist mask 119, an InGaAs slope formation layer 201, a p-GaAs contact layer 118 and a part of a p-(Al0.5 , Ga0.5 )0.5 In0.5 P clad layer 117 are etched, and thereafter, the photoresist mask 119 is removed, and selective growth of an n-GaAs block layer 124 by an organometallic vapor growth method is performed using a remained SiO2 mask 120. Thus, an intermediate width area 122 becomes a non-energized area 125 in its central part, and becomes an energized area 126 in its peripheral part. At the output of 3mW, a large spot size 204 coping with a usual standard dot size 203 is obtained, and at the output of 5mW, a small spot size 206 coping with a precise standard dot 205 is obtained. |
