| 摘要 |
PROBLEM TO BE SOLVED: To decrease the lattice defect density of the III-V compound semiconductor film on an amorphous film by a method wherein an amorphous film is formed on the III-V compound semiconductor film formed in a heterogeneous substrate, a window is perforated, a III-VB compound semiconductor film is formed on the amorphous film using the window as a nucleus, and a solar battery is arranged therein. SOLUTION: The III-V compound semiconductor film 2 formed on a heterogeneous substrate is composed of a III-V compound semiconductor film, having the lattice constant approximate to that of GaAs, formed on the substrate 1. An amorphous film 3 is formed by oxidizing the III-V compound semiconductor film. Windows 4 are formed by photolithography and etching. A III-V compound semiconductor film 5 can be formed by the growth method generating no polycrystalline in a dielectric film such as a MOCVD method and the like. As the lower layers of the III-V compound semiconductor film 2 and the III-V group semiconductor film 5 are separated by the amorphous film 3, only the lattice defect generated in the windows 4 affects on the III-V compound semiconductor film 5, defect density does not affect the deterioration of efficiency of a solar battery 6, and lattice defect density can be lowered. |
