| 摘要 |
PURPOSE: To exactly obtain a dose of specific ion species by determining the implantation quantity of the entire ion from ion beams and the ratio of the ion species and hydrogen ions by using a monitor means within a vacuum vessel. CONSTITUTION: A substrate holder 3 is set at a standby position and a profile monitor 6 is moved to a measurement position. The profile monitor 6 is irradiated with the part of the ion beam 1B and the surface distributed current density of the ion beam 1B is measured. A dose monitor 4 is irradiated with the ion beam 1B, by which the current density at the specific point is measured. As a result, the intensity of the ion beam 1B irradiated to the substrate 2 at the time of ion implantation is known. The ratio of the ion species is measured by an E×B monitor 5. As a result, the implantation quantity of the specific ion species is determined prior to the irradiation of the substrate 2 with the ion beam. The ion current is monitored by a does monitor 4 and the irradiation quantity of the ion beam 1B is controlled, by which the implantation dose of the specific ion species to the substrate 2 is measured.
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