Prodn. of thin film transistors

摘要

Prodn. of thin film transistors comprises: (a) applying a metal layer (11) to a substrate (10) and structuring as gate contact (G) of the transistor (1st masking step); (b) applying a gate insulator (12) for the transistor; (c) applying amorphous Si (13) as semiconductor; (d) applying and structuring a Si3n4 layer (14) (2nd masking step); (e) applying or producing n<+>- or p<+>-doped Si (15) for the drain and source contacts (D,S) of the transistor by ion implanting into the surface of the amorphous Si layer (13); (f) applying and structuring a 2nd metal layer (16) as drain and source contacts (D,S) (3rd masking layer); and (g) structuring the (un)doped amorphous Si layer (13,15) with the 2nd metal layer (16) and the Si3N4 layer (14) as mask and the gate insulator (12) as etch stop. The novelty is that structuring of the Si3N4 layer (14) is carried out opposite the underlying amorphous Si3N4 layer (13) in a plasma etching process.