Tin and/or lead contacts to P-type HgCdTe

摘要

An adhesive ohmic contact made to a p-type semiconductor metal substrate or layer (10) comprises tin. The contact preferably includes a tin film (24) approximately 2000 ANGSTROM in thickness. The p-type semiconductor compound contains mercury and, while described in conjunction with Hg1-xCdxTe, other elements exhibiting group II and group VI chemical behavior and properties may be used. A cap layer (30) is deposited over film (24), followed by insulating layer 32. Via (34) is then formed and, to complete contact (50), a metal (36) is deposited inside via (34).