发明名称 |
Low noise avalanche photodiode having an avalanche multiplication layer of InAlAs/InGaAlAs |
摘要 |
An avalanche photodiode includes an avalanche multiplication layer including a superlattice structure consisting of a plurality of barrier and well layers both lattice matched to InP such that the plurality of barrier and well layers are alternately provided one layer on the other layer. The barrier layers consist of InAlAs and the well layers consist of InCaAlAs quarternary system mixed crystal having a forbidden width smaller than 1 eV.
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申请公布号 |
US5432361(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19930148429 |
申请日期 |
1993.11.08 |
申请人 |
NEC CORPORATION |
发明人 |
TAGUCHI, KENKO |
分类号 |
H01L31/0352;H01L31/107;(IPC1-7):H01L29/78;H01L33/00 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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