Process for filling an isolation trench

摘要

A process for filling an isolation trench with a dielectric is described. The deposition pressure of a gas from which a silicon dioxide dielectric is deposited in a trench is changed on a real-time basis during such deposition. Such pressure gradually increases from about 20 mTORR to 900 mTORR. The result is that particle generation during the initial stages of the deposition is maintained at a low rate, while the high pressure needed to provide deposition in a trench as it is filled is provided.