| 摘要 |
<p>PURPOSE:To enhance the reliability of connection by forming the leading-out part of at least one of gate, source and drain electrodes with a specified metal- contg. material. CONSTITUTION:A gate electrode 2 and a gate side leading-out electrode 9 are formed integrally on a translucent insulating substrate 1 on the gate side, a gate insulating film 3 and a semiconductor layer 4 are successively formed on the gate electrode 2 and an ohmic contact layer 5 is formed from the tops of both ends of the semiconductor layer 4 to the gate insulating film 3. A source electrode 6 is formed on the left ohmic contact layer 5, a drain electrode 7 is formed on the right ohmic contact layer 5 and a pixel electrode 8 is formed on the end of the drain electrode 7 and the gate insulating film 3. The leading- out parts 9, 10 of at least one of the electrodes 2, 6, 7 are formed with a material contg. a metal whose oxide has <=10<-3>OMEGA.m resistivity.</p> |
