| 摘要 |
<p>PURPOSE:To obtain the manufacturing method of a composite semiconductor device wherein a coating stage of cream solder is reduced, the whole assembling line is shortened, a coater of cream solder is restrained to a minimum, and manufacturing cost is reduced. CONSTITUTION:One process out of coating processes of cream solder can be omitted by arranging the respective through holes 5a and 11a for solder coating, at one tip end portions of an anode side inner conductor plate 5 and a cathode side inner conductor plate 11. That is, parts (a) of a heat dissipating plate 2 and parts (b) of insulating plates 3 are coated with cream solder, and only the part (c) of the upper surface of an outside led-out conductor plate 4 is coated with cream solder. Next, a part (e) of the upper surface of the inner conductor plate 5 is coated with cream solder. Insertion parts of inner leads of an outside led-out conductor plate 12 and the inner conductor plate 11, the through-hole 5a of the anode side inner conductor plate 5, and the through-hole 11a of the cathode side inner conductor plate 11 are coated with cream solder. Each of the coating parts of cream solder is fixed by heating the whole part.</p> |
