发明名称 Semiconductor wafer to be etched electrochemically
摘要 A semiconductor wafer including a plurality of chips having respective portions to be etched electrochemically with application of an electric voltage to the semiconductor wafer immersed in an etching solution. The semiconductor wafer includes electric circuits formed therein for controlling electric energy applied to the respective portions.
申请公布号 US5172207(A) 申请公布日期 1992.12.15
申请号 US19910747582 申请日期 1991.08.20
申请人 NISSAN MOTOR CO., LTD. 发明人 NOJIRI, HIDETOSHI;UCHIYAMA, MAKOTO
分类号 C25F3/30;H01L21/306;H01L21/3063 主分类号 C25F3/30
代理机构 代理人
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