发明名称 |
Semiconductor wafer to be etched electrochemically |
摘要 |
A semiconductor wafer including a plurality of chips having respective portions to be etched electrochemically with application of an electric voltage to the semiconductor wafer immersed in an etching solution. The semiconductor wafer includes electric circuits formed therein for controlling electric energy applied to the respective portions.
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申请公布号 |
US5172207(A) |
申请公布日期 |
1992.12.15 |
申请号 |
US19910747582 |
申请日期 |
1991.08.20 |
申请人 |
NISSAN MOTOR CO., LTD. |
发明人 |
NOJIRI, HIDETOSHI;UCHIYAMA, MAKOTO |
分类号 |
C25F3/30;H01L21/306;H01L21/3063 |
主分类号 |
C25F3/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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