发明名称 FORMATION METHOD OF PATTERN
摘要 PURPOSE:To manufacture a corresponding mask with good efficiency by using a minimum reticle and a minimum exposure data by a method wherein a first process to expose a mask by using a first reticle and a second process to expose the prescribed number of chips inside an exposure unit by using a second reticle are provided and a double-exposure operation is executed for a partial region. CONSTITUTION:An exposure operation is executed, by using a reticle 3 using four chips as one exposure unit, to the whole surface of a wafer 1 including a ring-shaped detect region 1a near the wafer edge of the wafer 1 and a circular product region 1b at the inside. Then, a cover is placed on an alignment mask and an exposure region to be left as a product; an exposure operation as a second process is executed by using an exposure reticle 6, for deletion use, of one chip unit. At the second process, patterns in parts indicated by slant lines are destroyed one by one; a product pattern is manufactured in one chip. Thereby, when patterns are formed in the mask and the wafer, it is possible to form the pattern which can exclude a defective chip surely at a test process.
申请公布号 JPH0414812(A) 申请公布日期 1992.01.20
申请号 JP19900118401 申请日期 1990.05.08
申请人 FUJITSU LTD 发明人 AKUTAGAWA SATORU
分类号 H01L21/027 主分类号 H01L21/027
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