| 摘要 |
PURPOSE:To improve adhesiveness between a metallic film and a photoresist and to enable stable formation of a fine resist pattern by roughening a surface of the metallic film by dryetching the surface of the metallic film before applying the photoresist film. CONSTITUTION:After a semiconductor wafer surface is coated with an aluminum film through vacuum deposition, the aluminum film on the semiconductor wafer is dry-etched; then, irregularities are produced on the aluminum film surface. After a photoresist film is applied to the semiconductor wafer and baked as specified, the resist film is selectively exposed to ultraviolet rays. After development, it is hard-baked and a resist pattern is formed. The adhesiveness of the resist film formed in this way to the aluminum film is improved by about 50% when compared to the adhesiveness of a resist film formed without dryetching of a pre-treatment. |
