| 摘要 |
PURPOSE: To substantially lessen a memory device in surface area by a method, wherein transistors are provided onto the main surface of a substrate, and capacitors are provided in the substrate surrounding trenches. CONSTITUTION: Word lines such as word lines 3-1 to 3-4 are connected to the gates of transfer gate transistors 1-1-1 to 1-2-2 of memory devices in each row. By this setup, a read amplifier is provided with a comparator equipped with two input terminals, one is connected to an adjacent bit line such as a bit line 4-1 and the other is connected to an adjacent bit line such as a bit line 4-2. When a high-voltage signal is applied to a word line 3-3 while a memory device is kept in operation, the transistor 1-1-2 is turned on, and then the capacitor 2-1-2 is connected to a bit line 4-1. When write signals are applied to a bit line 4-1, the signals are stored in a capacitor 2-1-2, and signals fed to word line 3-3 are turned to logic zero, so that signals supplied to the bit line 4-1 are completely stored in the capacitor 2-1-2. |
