| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem of the conventional semiconductor devices that a metal element used to promote crystallization of an amorphous semiconductor film acts as a cause for damaging the stability and the reliability of electrical characteristics, when a TFT is manufactured. SOLUTION: A crystalline semiconductor film is formed by using the metal element used to promote the crystallization of the amorphous semiconductor film. The amorphous semiconductor film is selectivity doped with an impurity element, and an impurity region is formed. An electrode which is connected to the impurity region is formed. In succession, when a voltage is applied to the impurity region, the metal element is subjected to gettering in the impurity region. When a heating operation is performed at the same time, the diffusion rate of a gettering process is increased, and the gettering capability of the semiconductor device is increased.</p> |
