METHOD OF ALUMINIUM HIGH-DUTY SEMICONDUCTOR COMPONENTS' ALUMINIUM CONTACT ETCHING,申请号CS19880001280-传众专利搜索

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发明名称	METHOD OF ALUMINIUM HIGH-DUTY SEMICONDUCTOR COMPONENTS' ALUMINIUM CONTACT ETCHING
摘要
申请公布号	CS269214(B1)	申请公布日期	1990.04.11
申请号	CS19880001280	申请日期	1988.02.29
申请人	KACER JAN ING.,CS;ANDRS VLADIMIR ING.,CS;POJMAN PAVEL ING.,CS;ZAMASTIL JAROSLAV RNDR.,CS;RICAROVA DANIELA ING.,CS	发明人	KACER JAN ING.,CS;ANDRS VLADIMIR ING.,CS;POJMAN PAVEL ING.,CS;ZAMASTIL JAROSLAV RNDR.,CS;RICAROVA DANIELA ING.,CS
分类号	H01L21/28;(IPC1-7):H01L21/28	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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