| 摘要 |
PURPOSE:To obtain a semiconductor element provided with a heat flow circuit which responds to a transient state and can eliminate heat from a minute region, by forming at least one insulating layer by using a high thermal conduction insulating layer, and constituting it in the manner in which the heat in a heat generating part is eliminated by the heat flow circuit containing the high thermal conduction insulating layer. CONSTITUTION:At least one insulating layer of a semiconductor element is formed by using a high thermal conduction insulating layer, and constituted in the manner in which the heat in a heat generating part is eliminated by a heat flow circuit containing the high thermal conduction insulating layer. For example, an MOS FET element is constituted of the following; a substrate 1 composed of p-Si, a channel 2, a gate electrode 3 composed of polycrystalline Si, a gate insulating film 4 composed of a silicon oxide film SiO2, a source or drain composed of N<+> type Si, a wiring 6 composed of Al, and high thermal conduction insulating layers 11, 12 composed of AlN, BN, etc. Since the semiconductor element itself is provided with the heat flow circuit which responds to a transient state and can eliminate heat from a minute region, the integration degree of an electronic circuit is increased, and the high speed operation is stabilized. |
