| 摘要 |
PURPOSE:To treat sheets under a normal pressure at a low temperature by feeding gas containing ozone to organosilicon polymer coating a substrate to be treated. CONSTITUTION:A semiconductor wafer 12 is uniformly coated with a film such as a liquid organosilicon polymer film. A heater 15 contained in a placing base 13 is controlled to heat the wafer 12. Then, oxygen gas containing ozone supplied from an oxygen supply source 23 and an ozone generator 24 is regulated at its flow rate by a gas flowrate regulator 25, and flows from a gas flowing section 20 toward the wafer 12. Accordingly, the ozone is heated by the heated wafer 12 and an atmosphere therearound to be decomposed, thereby generating oxygen atom radical. Thus, since an oxide film can be formed at a high speed under a normal pressure at a low temperature, it can cope with multilayered interconnection and can form the oxide film at a low cost in a high efficiency.
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