发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To relieve the warpage of a chip and improve the reliability by employing resin material which is rubbery, highly heat-resistant and has a specific glass transition temperature as die-bonding material. CONSTITUTION:Elastomer which is rubbery at the room temperature and highly heat-resistant and has a glass transition temperature lower than 0 deg.C is employed as resin die-bonding material 2. Characteristic control agent such as hardner or hardening catalyst, filling material like silver, silica, alumina powder and the like, coupling agent for improving adhesiveness at the boundary, extra-fine particle silica powder for controlling viscosity and thioxotropy are properly added to the employed resin die-bonding material 2 to control electrical and mechanical characteristics and working characteristics. Even in the case of a copper system lead frame 1, even if a chip 3 is cooled to the room temperature after the heat curing of the die-bonding material 2 in a die-bonding process or a high temperature treatment in a wire-bonding process is completed, the warpage of the chip 3 is very little. Therefore, damages on a passivation film and so forth can be avoided and contamination of the surfaces of the chip and the lead frame caused by decomposed gas produced by heat deterioration of the material can be almost avoided.
申请公布号 JPS63278236(A) 申请公布日期 1988.11.15
申请号 JP19870036264 申请日期 1987.02.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUKUSHIMA JIRO
分类号 H01L21/52;H01L21/58;H01L23/14 主分类号 H01L21/52
代理机构 代理人
主权项
地址