| 摘要 |
PURPOSE:To enhance the sensitivity, the speed and the stability of a semiconductor device by providing a metal wiring layer formed on the upper layer of a wiring layer between elements over part or all regions of wiring layers between elements and connected to a predetermined potential to reduce an influence of coupling capacities between the elements and between wirings between the elements. CONSTITUTION:A metal wiring layer 31 formed on the upper layer of a wiring layer between elements is connected to a ground potential 6, and provided on the whole regions of elements and wiring layer between the elements. Since the elements and the wirings between the elements are all connected capacitively to the potential 6 through an interlayer insulating layer between the wiring layer between the elements and all metal wiring layers, even if there are coupling capacities between the elements and between the wirings between the elements, the influence of them to a circuit is reduced. This is similar when the metal wiring layer 31 is connected to a power source potential 5, Thus, the influence of an unnecessary coupling capacity is eliminated to miniaturize them, thereby obtaining a semiconductor device which operates stably at high sensitivity and high speed. |
