MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To control the inner stress of silicon nitride while restraining a crack from occuring by a method wherein mixed gas of SiN4-NH3-N2-H2 is used as applicable material gas to CVD process of grow discharge by high-frequency exceeding 1 MHz. CONSTITUTION:Silicon hydride and ammonia as main materials are mixed with N2 and H2 within the range of composition ratio of H2/(N2+H2)>0. A silicon nitride film is formed on the main surface of substrate by CVD process using high-frequency glow discharge exceeding 1 MHz. Thus, the inner stress of silicon nitride film to be formed can be controlled continuously from tensile stress to compressive stress by means of changing only composition ratio H2/(N2+H2) or discharge power. Resultantly, the inner stress ranges from 2X10dyn/cm<2> (tensile stress) to -5X10<9>dyn/cm<2> (compressive stress). Through these procedures, the inner stress of silicon nitride can be controlled restraining a crack from occuring.