| 摘要 |
PURPOSE:To manufacture a super lattice structured MOS device serviceable at high temperature by a method wherein the first and the second gate electrodes are arranged at the period of P and assuming respective gate insulating film thickness as ti, t2, the requirements of P<2000 Angstrom , (1/2)P>t1, t2 shall be met. CONSTITUTION:N<+>type source.drain layers 11, 12 are provided on a P type Si substrate 10 to form a W made lattice gate electrode 13 and an Al made upper electrode 14 through the intermediary of an SiO2 film 15. A partial protrusion 16 from the electrode 14 as the second gate electrode is arranged between the electrode 14 and the electrode 13. The protrusion 16 from the electrode 13 and the electrode 14 are arranged in the period of 2000 Angstrom while the thickness t1 of the SiO2 film 15 between the electrode 13 and the substrate 10 and the thickness t2 cf the same between the protrusion 16 and the substrate 10 are respectively made thinner than (1/2)P. At this time, the lattice gate electrode 13 and the upper gate electrode 14 have equivalent effect on the surface of substrate 10 so that the value of surface potential amplitude V0 may be increased making the title semiconductor serviceable at high temperature. |
