Multiple ROM data state, read/write memory cell.

摘要

A read/write memory cell is disclosed in which multiple ROM data states can be stored. Independent sensing of the resistance values of each of two resistors (13, 14) for the storage of multiple ROM data states. The resistors are encompassed in a pair of cross-coupled resistive gate devices (11, 12) forming branch circuits, thereby allowing each branch circuit to control the conduction of current in the other branch circuit. This allows for read/write data storage in flip-flop-like fashion. In addition, since resistive gate devices are used, the ROM data may be programmed during the late stages of manufacturing.