| 摘要 |
PURPOSE:To obtain a semiconductor device having large power by a small package by selectively changing the thickness of an electrode leading-out layer in accordance with a region. CONSTITUTION:An N-type Si substrate 1 is used as a collector, N-type split emitters 3 are formed in a P-type base 2, and each junction section is protected by SiO2 films 4. Al 9 in thickness of approximately 6mum required for line junctions is evaporated on the whole surface, and photo-resist masks 10a, 10b are applied to line junction regions 9a, 9b and Al is etched, thus shaping film thickness corresponding to a wire rod. The masks 10a, 10b are removed and a resist mask 11 is executed, and an electrode leading-out layer 12 having a desired refined pattern and layer thickness is acquired through etching. According to the constitution, since there is the electrode leading-out layer thickened in the line junction regions and thinned in the refined patterned section, capacitance can be increased even when a base and the pattern of an emitter region are fined, thus obtaining a small-sized device with a large power.
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